inchange semiconductor isc product specification isc website www.iscsemi.cn isc silicon npn power transistor 2SC4585 description collector-emitter sustaining voltage- : v ceo(sus) = 800v(min) fast switching speed applications designed for power switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base v oltage 1200 v v ceo collector-emitter v oltage 800 v v ebo emitter-base voltage 7 v i c collector current-continuous 10 a i cm collector current-peak 20 a i b base current-continuous 4 a i bm base current-peak 8 a p t total power dissipation @ t c =25 85 w t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.47 /w
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistor 2SC4585 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.2a; i b = 0 800 v v ce( sat ) collector-emitter saturation voltage i c = 5a; i b = 1a 1.0 v v be( sat ) base-emitter saturation voltage i c = 5a; i b = 1a 1.5 v i cbo collector cutoff current at rated voltage 100 a i ceo collector cutoff current at rated voltage 100 a i ebo emitter cutoff current at rated voltage 100 a h fe-1 dc current gain i c = 5a; v ce = 5v 8 h fe-2 dc current gain i c = 1ma; v ce = 5v 7 f t current-gainbandwidth product i c = 1a; v ce = 10v 8 mhz switching times t on turn-on time i c = 5a, i b1 = 1a; i b2 = -2a; r l = 50 ; v bb2 = 4v 0.5 s t stg storage time 3.5 s t f fall time 0.3 s
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